| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：91.41 Kbytes 页数：20 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：3.84257 Mbytes 页数：17 Pages | CEL | CEL | ||
丝印：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of 文件：224.86 Kbytes 页数：22 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol 文件：91.41 Kbytes 页数：20 Pages | NEC 瑞萨 | NEC | ||
丝印：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab 文件：223.67 Kbytes 页数：22 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：R55；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab 文件：223.67 Kbytes 页数：22 Pages | RENESAS 瑞萨 | RENESAS | ||
丝印：R57；NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: 文件：222.03 Kbytes 页数：15 Pages | RENESAS 瑞萨 | RENESAS | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η 文件：1.93544 Mbytes 页数：12 Pages | CEL | CEL | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η 文件：89.38 Kbytes 页数：13 Pages | NEC 瑞萨 | NEC | ||
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency: η 文件：89.38 Kbytes 页数：13 Pages | NEC 瑞萨 | NEC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
30000 |
询价 | ||||
NEC |
23+ |
SOT-343 |
33000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
NEC |
2023+ |
SOT-343 |
58000 |
进口原装,现货热卖 |
询价 | ||
瑞萨 |
25+ |
QFPSOPDIP |
30675 |
专业代理瑞萨品牌原装正品 |
询价 | ||
NEC |
25+23+ |
SOT343 |
37922 |
绝对原装正品全新进口深圳现货 |
询价 | ||
NEC |
20+ |
SOT343 |
49000 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NEC |
2447 |
SOT343 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
NEC |
21+ |
SOT343 |
3000 |
询价 | |||
NEC |
24+ |
SOT343 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT343 |
50000 |
全新原装正品现货,支持订货 |
询价 |
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