Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：102.62 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：192.15 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：192.15 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

文件：277.42 Kbytes 页数：15 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

文件：109.88 Kbytes 页数：16 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial High Frequency Amplifier / Oscillator

Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz

文件：277.42 Kbytes 页数：15 Pages

RENESAS

瑞萨

丝印：WA；Package：TSM；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

文件：165.08 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

文件：166.84 Kbytes 页数：5 Pages

TOSHIBA

东芝

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 55 ns (typ.)

文件：165.08 Kbytes 页数：5 Pages

TOSHIBA

东芝