Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：192.15 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

• High power gain low noise figure at low power operation:\n   |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz);

Renesas

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：192.15 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain low noise figure at low power operation: |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：102.62 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司