2N7002

Marking：WA；Package：SOT-23；FIELD EFFECT TRANSISTOR

INTERFACEANDSWITCHINGAPPLICATION. FEATURES HighdensitycelldesignforlowRDS(ON). Voltagecontrolledsmallsignalswitch. Ruggedandreliable. Highsaturationcurrentcapablity.

2SC5703

Marking：WA；Package：TSM；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

AD-BZT52C6V2S

Marking：WA；Package：SOD-323；Plastic-Encapsulated Diode

FEATURES ⚫Planardieconstruction ⚫200mWpowerdissipationonceramicPBC ⚫Generalpurpose,mediumcurrent ⚫AEC-Q101qualified

BD45402G

Marking：WA；Package：SSOP5；VOLTAGE DETECTOR IC

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46401

Marking：WA；Package：SSOP5；Counter Timer Built-in CMOS Voltage Detector IC Package SSOP5 is similar to SOT-23-5 (JEDEC)

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-inco

BD46401G

Marking：WA；Package：SSOP5；Voltage Detector IC built in Delay Circuit

VOLTAGEDETECTORICwithcountertimer BD45XXXGandBD46XXXGareseriesofhigh-accuracydetectionvoltageandlowcurrentconsumptionVOLTAGEDETECTORICsadoptingCMOSprocess.Newlineupof156typeswithdelaytimecircuithavedeveloped.DelaytimeisfixedintheICduetothebuilt-incoun

BZT52B5V6

Marking：WA；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.4V–51VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52B5V6S

Marking：WA；Package：SOD-323；200mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 200mWPowerDissipation 2.4V–75VNominalZenerVoltage 2StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52C5V6

Marking：WA；Package：SOD-123；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0V–51VNominalZenerVoltage 5StandardVzTolerance DesignedforSurfaceMountApplication PlasticMaterial–ULRecognitionFlammability Classification94V-0

BZT52-C5V6

Marking：WA；Package：SOD-123；SURFACE MOUNT SILICON ZENER DIODES

FEATURES •PlanarDieconstruction •410mWPowerDissipation •ZenerVoltagesfrom2.4~75V •IdeallySuitedforAutomatedAssemblyProcesses •IncompliancewithEURoHS2002/95/ECdirectives