2SC5703

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-SpeedSwitchingApplications DC-DCConverterApplications StrobeApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5703

Marking：WA；Package：TSM；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5703

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5703

Silicon NPN Epitaxial Type High-Speed Switching Applications

2SC5703_V01

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

•HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturationvoltage:VCE(sat)=0.12V(max) •High-speedswitching:tf=55ns(typ.)

2SC5703_06

Silicon NPN Epitaxial Type High-Speed Switching Applications