Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications.

Horizontal Deflection Output for Super High Resolution Display, Color TV, Digital TV. High Speed Switching Applications.  High voltage: VCBO= 1500 V  Low saturation voltage: VCE (sat)= 3 V (max)  High speed: tf(2) = 0.1 µs (typ.)

文件：141.82 Kbytes 页数：5 Pages

TOSHIBA

东芝

MEDIUM POWER AMPLIFIER APPLICATIONS

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA)

文件：95.22 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN PLANAR SILICON TRANSISTOR

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：50.77 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：57.89 Kbytes 页数：2 Pages

PANASONIC

松下

SMALL-SIGNAL TRANSISTOR FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5727 is a super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for easy mounting APPLI

文件：48.43 Kbytes 页数：2 Pages

ISAHAYA

谏早电子

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5728 is a ultra super mini package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. FEATURE ● High gain bandwidth product. fT=10.0GHz ● High gain, low noise. ● Can operate at low voltage. ● Super mini package for e

文件：131.4 Kbytes 页数：2 Pages

ISAHAYA

谏早电子

MEDIUM POWER TRANSISTOR (-30V,-0.5A)

Features 1) High speed switching. (Tf : Typ. : 40ns at IC = −500mA) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −100A, IB = −100mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5729 Applications Small signal low frequency amplif

文件：43.01 Kbytes 页数：4 Pages

ROHM

罗姆

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2: Low phase distortion transistor suited

文件：335.92 Kbytes 页数：32 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5737, 2SC5736) Q1: Low noise transistor NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz Q2: Low phase distortion transistor suited

文件：335.92 Kbytes 页数：32 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD

文件：322.41 Kbytes 页数：30 Pages

RENESAS

瑞萨