NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) packag

文件：305.1 Kbytes 页数：16 Pages

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NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) packag

文件：305.1 Kbytes 页数：16 Pages

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NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA

文件：81.5 Kbytes 页数：14 Pages

NEC

瑞萨

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

文件：33.54 Kbytes 页数：4 Pages

SANYO

三洋

isc Silicon NPN Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • Fast Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulators applications.

文件：261.23 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

DESCRIPTION · Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) · Fast Switching Speed · Wide Area of Safe Operation APPLICATIONS · Designed for switching regulators applications.

文件：252.46 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High reliability. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

文件：31.31 Kbytes 页数：4 Pages

SANYO

三洋

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS

MEDIUM POWER AMPLIFIER APPLICATIONS STOROBO FLASH APPLICATIONS • Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)

文件：106.08 Kbytes 页数：4 Pages

TOSHIBA

东芝

MEDIUM POWER AMPLIFIER STROBO FLASH

DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA)

文件：184 Kbytes 页数：3 Pages

UTC

友顺

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High gain bandwidth product fT = 9 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz

文件：137 Kbytes 页数：13 Pages

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