Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

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ISC

无锡固电

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type Power supply for Audio & Visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters ■ Features • High-speed switching (tstg: storage time/tf: fall time is short) • Low collector-emitter saturation voltage VCE(sat) • Superior fo

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PANASONIC

松下

High-Frequency Low-Noise Amplifier and OSC Applications

High-Frequency Low-Noise Amplifier and OSC Applications Features • Low-noise use : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=6.5GHz typ (VCE=1V). : fT=11.2GHz typ (VCE=3V). • Low operating voltage. • Ultraminiature and thin flat leadless packag

文件：52.61 Kbytes 页数：7 Pages

SANYO

三洋

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.3dB typ (f=2GHz). • High cutoff frequency : fT=8.5GHz typ (VCE=1V). : fT=12.5GHz typ (VCE=3V). • Low operating voltage. • High gain : |S21e|2=10.5dB typ (f=2GHz). • Ultraminiature and thin flat lead

文件：42.18 Kbytes 页数：7 Pages

SANYO

三洋

2SC5783

High-Frequency Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.5dB typ (f=2GHz). • High cutoff frequency : fT=6.0GHz typ (VCE=1V). : fT=10.5GHz typ (VCE=3V). • Low operating voltage. • Ultraminiature and thin leadless package. (1.4mm✕

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SANYO

三洋

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.)

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.)

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TOSHIBA

东芝

丝印：3E；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

文件：1.51775 Mbytes 页数：3 Pages

DGNJDZ

南晶电子