Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：33.08 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：31.53 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 1600V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):=3.0V(Max) @IC= 10A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：262.07 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V) • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：53.32 Kbytes 页数：3 Pages

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CRT DEVICE PLAY

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：53.17 Kbytes 页数：3 Pages

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三洋

2SC790

文件：39.1 Kbytes 页数：1 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：137.97 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：137.97 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Current Switching Applications

文件：67.01 Kbytes 页数：5 Pages

SANYO

三洋

High-Current Switching Applications

文件：507.53 Kbytes 页数：10 Pages

SANYO

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