MEDIUM POWER AMPLIFIER STROBO FLASH

文件：188.3 Kbytes 页数：4 Pages

UTC

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MEDIUM POWER AMPLIFIER STROBO FLASH

文件：188.3 Kbytes 页数：4 Pages

UTC

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Silicon NPN RF Transistor

文件：82.56 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：138.39 Kbytes 页数：5 Pages

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Silicon NPN Epitaxial Type High-Speed Switching Applications

文件：138.39 Kbytes 页数：5 Pages

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文件：1.47257 Mbytes 页数：3 Pages

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Silicon NPN Epitaxial VHF/UHF wide band amplifier

• High power gain low noise figure at low power operation:\n   |S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz);

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Power transistor for high-speed switching applications

Feature：Low saturation voltage\nApplication Scope：Mobile equipment power supplies\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 4 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.25 W \nCollector-emitter voltage VCEO 50 V ;

Toshiba

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Transistor-Small Signal Bip-TRSs for High Frequency Amplifier

Renesas

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