丝印：R57；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for 460 MHz to 2.4 GHz medium output power amplification • PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm • High collector efficiency:

文件：222.03 Kbytes 页数：15 Pages

RENESAS

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High-Speed Switching Applications DC-DC Converter Applications Strobe Applications

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.)

文件：115.55 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)

文件：109.47 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)

文件：215.65 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)

文件：215.65 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF Wide band amplifier

Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)

文件：224.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF / UHF Wide band amplifier

Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)

文件：224.61 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product fT = 10.6 GHz typ. • High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz • Very low distortion Output IP3 (800 MHz) = 36 dBm typ.

文件：92.25 Kbytes 页数：13 Pages

HITACHIHitachi Semiconductor

日立日立公司

NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA

文件：81.5 Kbytes 页数：14 Pages

NEC

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