NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA

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NEC

瑞萨

NPN SiGe RF TRANSISTOR FOR LOW NOISE ⋅ HIGH-GAIN AMPLIFICATION

FEATURES • Ideal for low noise ⋅ high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • SiGe technology (fT = 60 GHz, fmax = 60 GHz) • Flat-lead 4-pin thin-type super minimold (M04) packag

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RENESAS

瑞萨

TO-92

ROHM

罗姆

上传：深圳市鸿昌盛电子科技有限公司

TO-92

ROHM

罗姆

上传：深圳市鸿昌盛电子科技有限公司

TO220F

SANYO

三洋

上传：深圳市启航讯科技有限公司