Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：282.77 Kbytes 页数：7 Pages

ALLEGRO

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：223.02 Kbytes 页数：7 Pages

SANKEN

三垦

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

文件：249.08 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Good Linearity of (IFE • Complement to Type 2SA2151 APPLICATIONS • Designed for audio and general purpose applications

文件：123.57 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

音频放大晶体管 (Audio Amplification Transistor)

音频放大晶体管 (Audio Amplification Transistor)

Allegro

Package：TO-3P-3，SC-65-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 200V 15A TO3P

SANKEN

三垦

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min)-2SC6011 ​​​​​​​ = 200V(Min)-2SC6011A • Good Linearity of hFE • Complement to Type 2SA2151/A • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope

文件：254.3 Kbytes 页数：2 Pages

ISC

无锡固电

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：223.37 Kbytes 页数：7 Pages

SANKEN

三垦

Audio Amplification Transistor

Description By adapting the Sanken unique wafer-thinner technique, these NPN power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit

文件：282.77 Kbytes 页数：7 Pages

ALLEGRO

双极型晶体管

硅 NPN 三重扩散型晶体管 ・适用于功放输出段。\n・有配对品。\n・ASO 较广。;

Sanken

三垦