NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of gol

文件：91.41 Kbytes 页数：20 Pages

NEC

瑞萨

丝印：R55；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

文件：224.86 Kbytes 页数：22 Pages

RENESAS

瑞萨

Package：SC-82A，SOT-343；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 12GHZ SOT343

CEL

SOT343

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

TO-92

ROHM

罗姆

上传：深圳市鸿昌盛电子科技有限公司