丝印：R55；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

文件：224.86 Kbytes 页数：22 Pages

RENESAS

瑞萨

丝印：R55；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliability through use of

文件：224.86 Kbytes 页数：22 Pages

RENESAS

瑞萨

丝印：R55；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

文件：223.67 Kbytes 页数：22 Pages

RENESAS

瑞萨

丝印：R55；NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm • HFT3 technology (fT = 12 GHz) adopted • High reliab

文件：223.67 Kbytes 页数：22 Pages

RENESAS

瑞萨

PHOTOMULTIPLIER TUBE

300 to 850 nm Response (S-20) 51 mm (2 Inch) Diameter, 10-stage, Head-On Type

文件：19.37 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

PHOTOMULTlPLlER TUBE

Stable Operation in High Magnetic Fields beyond 1 Tesla 25 mm (1 Inch) Diameter, Proximity Photocathode and Fine Mesh Dynodes

文件：24.22 Kbytes 页数：2 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

NIR PHOTOMULTIPLIER TUBES

OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. NIR-PMTs the R5509-42 and -72 not only have the

文件：391.9 Kbytes 页数：12 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

NIR PHOTOMULTIPLIER TUBES

OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-43 and -73 have photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. The new structure ensures higher sensitivity measurements with

文件：121.21 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

NIR PHOTOMULTIPLIER TUBES

OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. NIR-PMTs the R5509-42 and -72 not only have the

文件：391.9 Kbytes 页数：12 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

NIR PHOTOMULTIPLIER TUBES

OVER VIEW Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-43 and -73 have photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm where beyond 1.1 µm have been the limit of conventional photocathodes. The new structure ensures higher sensitivity measurements with

文件：121.21 Kbytes 页数：4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社