NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：461.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

丝印：C5242；NPN TRIPLE DIFFUSED(FOR POWER AMPLIFIER APLLICATIONS)

Power Amplifier Applications • High Collector breakdown voltage: VCEO= 230 V (min) • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

文件：150.92 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector Breakdown Voltage-: V(BR)CEO = 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications

文件：253.07 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：461.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor Features • High Current Capability: IC= 15A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO=230V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1962/FJA42

文件：461.89 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：46 Kbytes 页数：2 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage VCEO =1700 V(Min) ·Low Collector Saturation Voltage : VCE(sat) = 3V(Max.)@ IC= 2.8A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage and general purpose applicatio

文件：328.49 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：46.06 Kbytes 页数：2 Pages

PANASONIC

松下

High-speed switching

DESCRIPTION ·High breakdown voltage, and high reliability ·Wide area of safe operation (ASO) ·High-speed switching APPLICATIONS ·Designed for horizontal deflection output applications.

文件：196.48 Kbytes 页数：2 Pages

ISC

无锡固电