Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：46.06 Kbytes 页数：2 Pages

PANASONIC

松下

UHF to S-Band Low-Noise Amp, OSC Applications????

UHF to S-Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : |S21e|2=10dB typ (f=1.5GHz). • High cutoff frequency : fT=11GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=

文件：144.98 Kbytes 页数：5 Pages

SANYO

三洋

UHF to S-Band Low-Noise Amplifier OSC Applications

UHF to S-Band Low-Noise Amplifier OSC Applications Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA)

文件：63.35 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP

Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

文件：349.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 10V, 30mA, fT=8GHz, NPN Single MCP

Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ

文件：349.84 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.6 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：64.68 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：64.48 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)

Features 1) Flat DC current gain characteristics. 2) High breakdown voltage. 3) High ft. (Typ. 150MHz) 4) Wide SOA(safe operating area) 5) Complements the 2SC5248.

文件：38.36 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) • High Switching Speed APPLICATIONS • Designed for switching regulator and general purpose applications.

文件：239.12 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application : Switching Regulator and General Purpose

文件：24.29 Kbytes 页数：1 Pages

SANKEN

三垦