NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HDTV HIGH SPEED SWITCHING APPLICATIONS

文件：227.6 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

文件：130.31 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

文件：154.45 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(H)IS package ·High voltage;high speed ·Low collector saturation voltage APPLICATIONS ·Horizontal deflection output for high resolution display,color TV ·High speed switching applications

文件：243.81 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：37.33 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

Silicon NPN triple diffusion mesa type For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：37.33 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：36.97 Kbytes 页数：2 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1700V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output applications.

文件：244.85 Kbytes 页数：2 Pages

ISC

无锡固电

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

文件：50.84 Kbytes 页数：8 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 17 GHz TYP. • High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package

文件：50.84 Kbytes 页数：8 Pages

NEC

瑞萨