RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

文件：296.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：46.74 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications

文件：156.25 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·High breakdown voltage ·High reliability APPLICATIONS ·For inverter lighting applications

文件：183.12 Kbytes 页数：4 Pages

JMNIC

锦美电子

NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)

HIGH VOLTAGE POWER SWITCHING APPLICATIONS

文件：65.73 Kbytes 页数：1 Pages

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

文件：182.29 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

文件：237.37 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High breakdown voltage • High reliability APPLICATIONS • For inverter lighting applications

文件：155.45 Kbytes 页数：4 Pages

ISC

无锡固电

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：46.78 Kbytes 页数：4 Pages

SANYO

三洋

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage. • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：44.34 Kbytes 页数：4 Pages

SANYO

三洋