NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

文件：39.77 Kbytes 页数：8 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE • High fT 16 GHz TYP. • High gain |S21e|2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA • NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA • 6-pin Small Mini Mold Package

文件：39.77 Kbytes 页数：8 Pages

NEC

瑞萨

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf = 0.15 µs (Typ.) Collector Metal (Fin) is Fully Covered with Mold Resin.

文件：229.68 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion mesa type

For horizontal deflection output ■ Features ● High breakdown voltage, and high reliability through the use of a glass passivation layer ● High-speed switching ● Wide area of safe operation (ASO)

文件：37.13 Kbytes 页数：2 Pages

PANASONIC

松下

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features · High gain : S21e2=9.5dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ.

文件：47.22 Kbytes 页数：6 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz). • High cut-off frequency : fT=6.7GHz typ.

文件：54.48 Kbytes 页数：6 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features · High gain : |S21e|2=9dB typ (f=1GHz). · High cutoff frequency : fT=6.7GHz typ.

文件：47.07 Kbytes 页数：6 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

文件：98.62 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

文件：296.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP

Features • High gain : ⏐S21e⏐2=9dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ

文件：296.02 Kbytes 页数：8 Pages

ONSEMI

安森美半导体