VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=10.5dB typ (f=1GHz). • High cutoff frequency : fT=6.5GHz typ.

文件：122.2 Kbytes 页数：4 Pages

SANYO

三洋

VHF to UHF Wide-Band Low-Noise Amp Applications???

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : |S21e|2=12dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ. • Very small-sized package permiting 2SC5231-applied sets to be made small and slim.

文件：129.74 Kbytes 页数：5 Pages

SANYO

三洋

VHF to UHF Wide-Band Low-Noise Amplifier Applications

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

文件：70.35 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

文件：526.52 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

文件：526.52 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 10V, 70mA, fT=7GHz, NPN Single SMCP

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall-sized package permitting applied sets to be made small and slim

文件：526.52 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

文件：160.36 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ● Large collector current: IC = 500 mA (max).

文件：41.6 Kbytes 页数：2 Pages

KEXIN

科信电子

NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

文件：159.63 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features • Excellent high frequency characteristics fT = 400 MHz typ • High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

文件：36.57 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司