NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS)

General Purpose Amplifier Applications Switching and Muting Switch Application • Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA • Large collector current: IC = 500 mA (max)

文件：160.36 Kbytes 页数：4 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial

Features ● Low saturation voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA ● Large collector current: IC = 500 mA (max).

文件：41.6 Kbytes 页数：2 Pages

KEXIN

科信电子

General Purpose Amplifier Applications

文件：137.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

Transistor for low frequency small-signal amplification

Feature：High current\nPolarity：NPN\nComplementary Product：2SA1953\nRoHS Compatible Product(s) (#)：Available Collector Current IC 0.5 A \nCollector-emitter voltage VCEO 12 V ;

Toshiba

东芝

General Purpose Amplifier Applications

文件：137.69 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 12V 0.5A SC59

Toshiba Semiconductor and Storage