Silicon NPN Triple Diffused Type High-Voltage Switching Applications

High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • High-speed switching: tr = 1.0 μs (max) ,tf = 1.5 μs (max) • High breakdown voltage: VCEO = 400 V

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

东芝

FOR RELAY DRIVE POWER SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE

[Isahaya Electronics Corporation] DESCRIPTION 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE. Complementary with 2SA1944. FEATURES ● High voltage VCEO = 50V ● Small collector to emitter saturation voltage VCE(sat)

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SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5209 is a silicon NPN epitaxial type transistor. It designed with high voltage, high collector current and high hFE. Complementary with 2SA1944. FEATURES ● High voltage VCEO = 50V ● Small collector to emitter saturation voltage VCE(sat) = 0.15V typ (@IC = 500mA, IB = 10mA

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ISAHAYA

谏早电子

Small Signal Transistor

■ Features ● High hFE : hFE=600 to 1800 ● High breakdown voltage ● Small package for mounting ● Complementary to 2SA1944

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KEXIN

科信电子

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE

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ISAHAYA

谏早电子

Small Signal Transistor

■ Features ● High voltage VCEO=50V. ● Small package for mounting. ● Complementary to 2SA1945

文件：50.53 Kbytes 页数：1 Pages

KEXIN

科信电子

Small Signal Transistor

■ Features ● Low Collector saturation voltage ● High fT fT=180MHz typ ● Excellent liinearity of DC forward current gain ● High collector current ICP=1A ● Complementary to 2SA1946

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KEXIN

科信电子

FOR HIGH CURRENT DRIVE APPLICATION SILICON NP EPITAXIAL TYPE

DESCRIPTION 2SC5212 is a resin sealed silicon NPN epitaxial transistor. It designed with high collector current, small VCE(sat). Complementary with 2SA1946. FEATURE ● Low collector to emitter saturation voltage VCE(sat)=0.2V typ ● High fT=180MHz typ ● Excellent linearity of DC forward curre

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ISAHAYA

谏早电子

For Low Frequency Amplify Application Silicon Npn Epitaxial Type

[Isahaya] DESCRIPTION 2SC5214 is a resin sealed silicon NPN epitaxial type transistor. It designed with high collector current and 2 to 3.5W low frequency power amplify. Complementary with 2SA1947. APPLICATION Radio, tape recorder, small type stereo, etc. Low frequency power amplify circu

文件：155.76 Kbytes 页数：3 Pages

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