NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High breakdown voltage : VCEO = 400 V • Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)

文件：132.83 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.05 A \nCollector-emitter voltage VCEO 400 V ;

Toshiba

东芝

AUK

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TO126

UTC(友顺)

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