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2SC5337	文件：59.55 Kbytes Page：8 Pages	NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES • Low distortion IM2 = 59 dB TYP. @VCE = 10 V, 文件：59.55 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SC5337	文件：877.51 Kbytes Page：6 Pages	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 文件：877.51 Kbytes 页数：6 Pages	CEL	CEL
2SC5337	文件：104.95 Kbytes Page：7 Pages	NPN Silicon RF Transistor for High-Frequency FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45 文件：104.95 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SC5337-AZ	文件：104.95 Kbytes Page：7 Pages	NPN Silicon RF Transistor for High-Frequency FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45 文件：104.95 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SC5337-AZ	文件：877.51 Kbytes Page：6 Pages	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 文件：877.51 Kbytes 页数：6 Pages	CEL	CEL
2SC5337-T1	文件：877.51 Kbytes Page：6 Pages	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 文件：877.51 Kbytes 页数：6 Pages	CEL	CEL
2SC5337-T1	文件：104.95 Kbytes Page：7 Pages	NPN Silicon RF Transistor for High-Frequency FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45 文件：104.95 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SC5337-T1-AZ	文件：104.95 Kbytes Page：7 Pages	NPN Silicon RF Transistor for High-Frequency FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45 文件：104.95 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SC5337-T1-AZ	文件：877.51 Kbytes Page：6 Pages	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536 文件：877.51 Kbytes 页数：6 Pages	CEL	CEL
2SC5337_15	文件：99.31 Kbytes Page：7 Pages	NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold 文件：99.31 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS

晶体管资料

型号：
2SC5337
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
表面帖装型（SMD）_超高频/特高频（UHF）_CATV
封装形式：
直插封装
极限工作电压：
30V
最大电流允许值：
0.25A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
最大耗散功率：
放大倍数：
图片代号：
H-100
vtest：
30
htest：
999900
atest：
0.25
wtest：
0

详细参数

型号：
2SC5337
制造商：
NEC
制造商全称：
NEC
功能描述：
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	2SC5337	RENESAS/瑞萨	20+	SOT-89	120000	原装正品可含税交易	询价
深圳市一线半导体有限公司	2SC5337	NEC	24+	SOT-89	6460	新进库存/原装	询价
深圳市佳鑫美电子科技有限公司	2SC5337	NEC	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
深圳市振宏微科技有限公司	2SC5337	SMD	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	2SC5337	NEC	23+	SOT-89	163171	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市旺财半导体有限公司	2SC5337		23+	TO	20000	正品原装货价格低	询价
深圳市南科功率半导体有限公司	2SC5337	NK/南科功率	2025+	SOT-89	986966	国产	询价
深圳市盈慧通电子有限公司	2SC5337	RENESAS/瑞萨	2511	SOT-89	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
深圳市创新迹电子有限公司	2SC5337	RENESAS/瑞萨	22+	SOT-89	20000	只做原装	询价
瀚佳科技(深圳)有限公司	2SC5337-T1	RENESAS	24+	SOT89	65200	一级代理/放心采购	询价

更多2SC5337供应商更新时间2026-1-17 14:00:00

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