Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：40.96 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：40.68 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage (VCBO=1600V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件：42.42 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件：41.85 Kbytes 页数：4 Pages

SANYO

三洋

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：79.06 Kbytes 页数：12 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：2.36129 Mbytes 页数：9 Pages

CEL

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：188.86 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：189.36 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：1.79869 Mbytes 页数：9 Pages

CEL

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

FEATURE • Ideal for medium-output applications • High gain, low noise • Small reverse transfer capacitance • Can operate at low voltage

文件：79.36 Kbytes 页数：12 Pages

NEC

瑞萨