NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

文件：106.78 Kbytes 页数：16 Pages

NEC

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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RF Tranasitor

The UTC 2SC5508 is an NPN silicon RF transistor, it uses UTC’sadvanced technology to provide customers with low-noise, etc.The UTC 2SC5508 is suitable for low-noise, high-gainamplification applications. Maximum available power gain: MAG=19dB TYP. @ VCE=2V,IC=20mA, f=2GHz fT=25GHz technology adopted;

UTC

友顺

Small Signal Silicon Bipolars

Silicon NPN transistor, 1.3dB noise figure, 15dB gain (Same as NE662M04)

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V

文件：106.78 Kbytes 页数：16 Pages

NEC

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件：229.94 Kbytes 页数：10 Pages

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