Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

For high breakdown voltage high-speed switching ■ Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

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PANASONIC

松下

Silicon NPN triple diffusion planar type

Features ● High-speed switching ● High collector to base voltage VCBO ● Wide area of safe operation (ASO) ● Satisfactory linearity of foward current transfer ratio hFE

文件：40.41 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, DC-AC INVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications DC-AC Inverter Applications • Excellent switching times: tr = 0.5 μs (max) tf = 0.3 μs (max) (IC = 0.4 A) • High collector breakdown voltage: VCEO =

文件：187.16 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications • High-speed switching: tf = 0.3 μs (max) (IC = 1.2 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 20 (min) (IC = 0.3 A)

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TOSHIBA

东芝

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 13(Min)@ IC= 1mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.

文件：301.14 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

文件：246.73 Kbytes 页数：2 Pages

ISC

无锡固电

High Speed Switching

文件：129.259 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

文件：188.86 Kbytes 页数：14 Pages

RENESAS

瑞萨