Silicon NPN Triple Diffused Horizntal Deflection Output

Features • High breakdown voltage VCES = 1500 V • Isolated package TO–3PFM • Built-in damper diode

文件：33.4 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage-: VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output stage applications.

文件：244.64 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTOR

For Low Frequency Power Amplify Application DESCRIPTION 2SC5482 is a silicon NPN epitaxial designed for relay drive or power supply application.

文件：106.47 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO

[Isahaya] For Low Frequency Power Amplify Application DESCRIPTION 2SC5482 is a silicon NPN epitaxial designed for relay drive or power supply application.

文件：105.9 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SILICON NPN TRANSISTOR

SILICON NPN TRANSISTOR

文件：100.13 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

TRANSISTOR

DESCRIPTION Mitsubishi 2SC5485 is a silicon NPN epitaxial type transisor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

文件：89.81 Kbytes 页数：3 Pages

ISAHAYA

谏早电子

FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO

[Isahaya Electronics Corporation] DESCRIPTION Mitsubishi 2SC5485 is a silicon NPN epitaxial type transisor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

文件：89.14 Kbytes 页数：3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

TRANSISTOR

DESCRIPTION 2SC5486 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. APPLICATION For storobe, DC/DC converter, power amplify application

文件：110.11 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.0dB typ (f=1GHz). • High gain : S21e2=12dB typ (f=1GHz). • High cutoff frequency : fT=7GHz typ. • Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm)

文件：34.51 Kbytes 页数：4 Pages

SANYO

三洋

NPN Single SSFP RF Transistor

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=12dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Ultrasmall, slim flat-lead package (1.4mm×0.8mm×0.6mm) • Halogen free compliance

文件：462.04 Kbytes 页数：7 Pages

ONSEMI

安森美半导体