NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY TV, COLOR TV HIGH SPEED SWITCHING APPLICATIONS

文件：185.03 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV, HIGH SPEED SWITCHING APPLICATIONS ● High Voltage : VCEO - 1700 V ● Low Saturation Voltage : VCE(sat) = 3 V (Max.) ● High Speed : tf = 0.15 μs (Typ.)

文件：177.73 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planer type(For low-frequency output amplification)

■ Features ● High foward current transfer ratio hFE. ● Low collector to emitter saturation voltage VCE(sat).

文件：38.55 Kbytes 页数：2 Pages

Panasonic

松下

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • High gain | S21|2= 12 dB TYP, @f = 1 GHz, VCE= 10 V, Ic = 20 mA • New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357

文件：49.2 Kbytes 页数：6 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE85634 / 2SC3357

文件：1.035339 Mbytes 页数：7 Pages

CEL

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC3357

文件：180.36 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC3357

文件：180.36 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

文件：104.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES • Low distortion IM2 = 59 dB TYP. @VCE = 10 V,

文件：59.55 Kbytes 页数：8 Pages

NEC

瑞萨

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

文件：877.51 Kbytes 页数：6 Pages

CEL