Silicon NPN triple diffusion mesa type(For horizontal deflection output)

For horizontal deflection output ■Features •High breakdown voltage, and high reliability through the use of a glass passivation layer •High-speed switching •Wide area of safe operation (ASO)

文件：40.83 Kbytes 页数：2 Pages

PANASONIC

松下

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件：42.27 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf=100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件：42.32 Kbytes 页数：4 Pages

SANYO

三洋

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO= 1500 V Low Saturation Voltage : VCE (sat)= 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：244.23 Kbytes 页数：5 Pages

TOSHIBA

东芝

Transistor Silicon NPN Triple Diffused Mesa Type

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS ● High Voltage : VCBO = 1700 V ● Low Saturation Voltage : VCE (sat) = 3 V (Max.) ● High Speed : tf (2) = 0.1 µs (Typ.)

文件：243.14 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

Features • High breakdown voltage VCES= 1500 V • High speed switching tf= 0.15 µsec (typ.) at fH= 64 kHz • Isolated package TO–3PFM

文件：46.13 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

Features ♦ High breakdown voltage VCBO= 1500 V ♦ High speed switching tf= 0.15 msec (typ.) at fH= 64 kHz ♦ Isolated package TO–3PFM

文件：45.06 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused Character Display Horizntal Deflection Output

• High breakdown voltage VCBO= 1500 V • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz • Isolated package TO–3PFM

文件：45.14 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

COLOUR TELEVISION

文件：6.0518 Mbytes 页数：70 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

文件：284.81 Kbytes 页数：2 Pages

ISC

无锡固电