VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features · Low noise : NF=1.0dB typ (f=1GHz). · High gain : |S21e|2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ. · Large allowable collector dissipation : PC=500mW max.

文件：46.23 Kbytes 页数：6 Pages

SANYO

三洋

VHF to UHF Wide-Band Low-Noise Amplifier Applications

VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max

文件：55.35 Kbytes 页数：5 Pages

SANYO

三洋

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max

文件：369.53 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP4

Features • Low-noise : NF=1.0dB typ (f=1GHz) • High gain : ⏐S21e⏐2=13dB typ (f=1GHz) • High cut-off frequency : fT=7GHz typ • Large allowable collector dissipation : PC=500mW max

文件：369.53 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier Applications

High-Frequency Low-Noise Amplifier Applications Features · Low noise : NF=1.1dB typ (f=1GHz). · High gain : |S21e|2 =12dB typ (f=1GHz). · High cutoff frequency : fT=8GHz typ.

文件：48.08 Kbytes 页数：6 Pages

SANYO

三洋

VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.2dB typ (f=1GHz). • High gain : |S21e|2=15dB typ (f=1GHz). • High cutoff frequency : fT=9.0GHz typ.

文件：45.75 Kbytes 页数：6 Pages

SANYO

三洋

UHF to S Band Low-Noise Amplifier Applications

UHF to S Band Low-Noise Amplifier Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : |S21e|2=11dB typ (f=1GHz). • High cutoff frequency : fT=11GHz typ. • Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : |S21e|2=6dB typ (f

文件：48.89 Kbytes 页数：6 Pages

SANYO

三洋

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For power amplification ■ Features • High-speed switching • TO-220D built-in: Excellent package with withstand voltage 5 kV guaranteed

文件：72.58 Kbytes 页数：3 Pages

PANASONIC

松下

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed. · High breakdown voltage (VCBO=1600V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件：41.02 Kbytes 页数：4 Pages

SANYO

三洋

NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)

文件：91.73 Kbytes 页数：12 Pages

NEC

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