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2SC5508-T2B-A

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION

NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19

文件:229.94 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5509

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB

文件:82.51 Kbytes 页数:15 Pages

NEC

瑞萨

2SC5509

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga = 12 dB TYP. @ VCE = 2 V, IC = 10 mA, f = 2 GHz • Maximum available power gain: M

文件:1.32923 Mbytes 页数:10 Pages

CEL

2SC5509

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件:231.72 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5509-A

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件:231.72 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5509-T2

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件:231.72 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5509-T2

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB

文件:82.51 Kbytes 页数:15 Pages

NEC

瑞萨

2SC5509-T2-A

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件:231.72 Kbytes 页数:10 Pages

RENESAS

瑞萨

2SC5501A

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件:470.98 Kbytes 页数:8 Pages

SANYO

三洋

2SC5501A_12

VHF to UHF Wide-Band Low-Noise Amplifier Applications

文件:470.98 Kbytes 页数:8 Pages

SANYO

三洋

技术参数

  • BVCEO(V):

    33

  • BVCBO(V):

    15

  • IC(A):

    0.035

  • HFE_MIN.:

    50

  • HFE_MAX.:

    100

  • HFE test_IC(mA):

    5

  • HFE test_VCE(V):

    2.0

  • ft  (GHz)_TYP:

    25

  • ft  (GHz)test_VCE:

    3

  • ft  (GHz)test_IC(mA):

    30

  • ft  (GHz)test_f(GHz):

    2

  • Package:

    SOT-363

供应商型号品牌批号封装库存备注价格
NEC
14+无铅
SOT-343
25700
优势产品,博盛微热卖!!!
询价
RENESAS
26+
SOT-343
360000
进口原装现货
询价
NEC
16+
SOT-343
10000
进口原装现货/价格优势!
询价
NEC
24+
SOT-343SOT-323-4
6205
新进库存/原装
询价
NEC
13+
NA
19258
原装分销
询价
NEC
23+
SOT-343
30000
原装正品,假一罚十
询价
NEC
24+
SOT416
3000
原装现货假一罚十
询价
NEC
17+
SOT-343
6200
100%原装正品现货
询价
SOT-343
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
1922+
SOT-343
35689
原装进口现货库存专业工厂研究所配单供货
询价
更多2SC550供应商 更新时间2026-1-29 15:01:00