NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available power gain: MAG = 14 dB

文件：82.51 Kbytes 页数：15 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件：231.72 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR\nFOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION\nFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES\n•  Ideal for medium output power amplification\n•  NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz\n•  Maximum available power gain: MAG = •  Ideal for medium output power amplification\n•  NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz\n•  Maximum available power gain: MAG = 14 dB TYP. @ VCE= 2 V, IC= 50 mA, f = 2 GHz\n•  fT= 25 GHz technology adopted\n•  Flat-lead 4-pin thin-type super minimold (M04) package;

Renesas

瑞萨

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE

NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for medium output power amplification • NF = 1.2 dB TYP., Ga= 12 dB TYP. @ VCE= 2 V, IC= 10 mA, f = 2 GHz • Maximum available

文件：231.72 Kbytes 页数：10 Pages

RENESAS

瑞萨

Package：SC-82A，SOT-343；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 3.3V 15GHZ SOT343

CEL