NPN Epitaxial Silicon Transistor

1. High Current Capability: IC= 17A. 2. High Power Dissipation : 150watts. 3. High Frequency : 30MHz. 4. High Voltage : VCEO=250V 5. Wide S.O.A for reliable operation. 6. Excellent Gain Linearity for low THD. 7. Complement to 2SA1943/FJL4215.

文件：205.6 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

Features • High Current Capability: IC = 17A. • High Power Dissipation : 150watts. • High Frequency : 30MHz. • High Voltage : VCEO=250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SA1943/FJL4215. • Thermal and electrical Spice models are av

文件：238.11 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

POWER AMPLIFIER APPLICATIONS

POWER AMPLIFIER APPLICATIONS FEATURES * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. * Complementary to UTC 2SA1943

文件：94.02 Kbytes 页数：3 Pages

UTC

友顺

isc Silicon NPN Power Transistor

DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage

文件：292.72 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO=300V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= 3.0V(Max) @IC= 8A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：288.73 Kbytes 页数：2 Pages

ISC

无锡固电

POWER AMPLIFIER APPLICATION

• Complementary to 2SA1943 • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

文件：281.46 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SA1943 APPLICATIONS • High current switching • Recommended for 100W high fidelity audio frequency amplifier output stage

文件：229.34 Kbytes 页数：4 Pages

SAVANTIC

High power NPN epitaxial planar bipolar transistor

Description This device is a NPN transistor manufactured using new BiT-LA (bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Features ■ High breakdown voltage VCEO = 230 V ■ Typical fT = 30 MHz Application ■ Audio power amplif

文件：157.43 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

150 Watt Silicon NPN Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SA1943 APPLICATIONS ·High current switching ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：424.28 Kbytes 页数：2 Pages

THINKISEMI

思祁半导体