Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package APPLICATIONS • For resonant switching regulator and general purpose applications

文件：175.41 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (lc= 2.5A, IB=0.5A) APPLICATIONS • Designed for resonant switching regulator and general purpose applications.

文件：126.16 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package APPLICATIONS • For resonant switching regulator and general purpose applications

文件：212.43 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Triple Diffused

Features • High brakedown voltage V(BR)CEO = 1300 V min Application High voltage amplifier

文件：149.97 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Triple Diffused

Features • High brakedown voltage V(BR)CEO = 1300 V min Application High voltage amplifier

文件：34.08 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

High-Voltage Amplifier Transistor

文件：23.28 Kbytes 页数：1 Pages

ROHM

罗姆

UHF to S Band Low-Noise Amp, OSC Applications??????

UHF to S Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : S21e2=10dB typ (f=1.5GHz). • High cutoff frequency : fT=11GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=7GHz type. : |S21e|2=5.5dB

文件：143.88 Kbytes 页数：5 Pages

SANYO

三洋

UHF to S Band Low-Noise Amp, OSC Applications??????

UHF to S Band Low-Noise Amplifier, OSC Applications Features • Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). • High gain : S21e2=11dB typ (f=1.5GHz). • High cutoff frequency : fT=11GHz typ. • Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=

文件：144.99 Kbytes 页数：5 Pages

SANYO

三洋

UHF to S Band Low-Noise Amp, OSC Applications??????

UHF to S Band Low-Noise Amp, OSC Applications

文件：145.49 Kbytes 页数：5 Pages

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Single SMCP

RF Transistor 10V, 30mA, fT=8GHz, NPN Single SMCP Features • Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) • High gain : ⏐S21e⏐2=10dB typ (f=1.5GHz) • High cut-off frequency : fT=8GHz typ • Low-voltage, low-current operation (VCE=1V, IC=1mA)

文件：518.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体