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2N7002KB

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002KBV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002KC

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.34A RDS(ON)

RECTRON

Rectron Semiconductor

2N7002KC

AdvancedMOSFETprocesstechnology

FeaturesandBenefits: AdvancedMOSFETprocesstechnology SpecialdesignedforPWM,loadswitchingand generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃operatingtemperature Description Itutilizesthelatest

SILIKRONSilikron Semiconductor Co.,LTD.

新硅能微电子新硅能微电子(苏州)有限公司

2N7002K-CAR

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowonresistanceRDS(ON)•Lowgatethresholdvoltage•Lowinputcapacitance•ESDprotectedupto2KV•-CARforautomotiveandotherapplicationsrequiringuniquesiteandcontrolchangerequirements;AEC-Q101qualifiedandPPAPcapable

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

2N7002KDU

NChannelMOSFETESDProtected2000V

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V. •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •Ruggedandreliable. •Highsaturationcurrentcapablity.

KECKEC CORPORATION

KEC株式会社

2N7002KDW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

PANJITPan Jit International Inc.

強茂強茂股份有限公司

2N7002KDW

DualN-ChannelMOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

WEITRON

Weitron Technology

2N7002KDW

DualN-ChannelSmallSignalMOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2N7002KDW

DualN-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

供应商型号品牌批号封装库存备注价格
NXP
2023+
SOT-23
8700
原装现货
询价
NXP
25+
SOT23
188600
全新原厂原装正品现货 欢迎咨询
询价
NXP
23+
SOT-23
250
全新原装正品现货,支持订货
询价
NXP
20+
SOT-23
250
进口原装现货,假一赔十
询价
PANJIT/强茂
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
PANJIT/强茂
24+
NA/
243000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
PANJIT/强茂
24+
SOT-23
60000
询价
PANJIT
21+
SOT23
243000
原装现货假一赔十
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
PANJIT/ 强茂
23+
SOT23-3
15000
全新原装现货,价格优势
询价
更多2N7002K/DG供应商 更新时间2025-5-15 15:00:00