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2N5686G

High-Current Complementary Silicon Power Transistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability-ICContinuous=50Amperes •DCCurrentGain-hFE=15-60@IC=25Adc •LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5686G

包装:散装 封装/外壳:TO-204AE 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 80V 50A TO204

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5686

POWERTRANSISTORS(50A,300W)

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. •ContinuousCollectorCurrent–IC=50A •PowerDissipation–PD=300W@TC=25°C •DCCurrentGain–hFE=15–60@IC=25A

MOSPEC

MOSPEC

2N5686

High-CurrentComplementarySiliconPowerTransistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability-ICContinuous=50Amperes •DCCurrentGain-hFE=15-60@IC=25Adc •LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5686

NPNPOWERSILICONTRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/464

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N5686

PowerTransistors

PowerTransistors

ETCList of Unclassifed Manufacturers

未分类制造商

2N5686

NPNPOWERSILICONTRANSISTOR

MicrosemiMicrosemi Corporation

美高森美美高森美公司

2N5686

High?묬urrentComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5686

High-CurrentComplementarySiliconPowerTransistors

Thesepackagesaredesignedforuseinhigh-poweramplifierandswitchingcircuitapplications. Features •HighCurrentCapability-ICContinuous=50Amperes •DCCurrentGain-hFE=15-60@IC=25Adc •LowCollector-EmitterSaturationVoltage-VCE(sat)=1.0Vdc(Max)@IC=25Adc •

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2N5686

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. •HighCurrentCapability–ICContinuous=50Amperes. •DCCurrentGain–hFE=15–60@IC=25Adc •LowCollector–EmitterSaturationVoltage–VCE(sat)=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N5686

SINPNPOWERBJT

HIGH-CURRENTCOMPLEMENTARYSILICONPOWERTRANSISTORS ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications. •HighCurrentCapability–ICContinuous=50Amperes. •DCCurrentGain–hFE=15–60@IC=25Adc •LowCollector–EmitterSaturationVoltage–VCE(sat)=

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2N5686

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

JAN2N5686

NPNPOWERSILICONTRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/464

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTX2N5686

NPNPOWERSILICONTRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/464

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANTXV2N5686

NPNPOWERSILICONTRANSISTOR

NPNPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/464

MicrosemiMicrosemi Corporation

美高森美美高森美公司

产品属性

  • 产品编号:

    2N5686G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    5V @ 10A,50A

  • 电流 - 集电极截止(最大值):

    1mA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    15 @ 25A,2V

  • 频率 - 跃迁:

    2MHz

  • 工作温度:

    -65°C ~ 200°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-204AE

  • 供应商器件封装:

    TO-204(TO-3)

  • 描述:

    TRANS NPN 80V 50A TO204

供应商型号品牌批号封装库存备注价格
onsemi
23+
TO-204AE
30000
晶体管-分立半导体产品-原装正品
询价
onsemi(安森美)
23+
TO-204
977
原厂订货渠道,支持BOM配单一站式服务
询价
ON
23+
TO-3
7750
全新原装优势
询价
ON
08+(pbfree)
TO-204(TO-3)
8866
询价
ONSemiconductor
18+
NA
3021
进口原装正品优势供应QQ3171516190
询价
ON
22+23+
TO-204
18108
绝对原装正品全新进口深圳现货
询价
三年内
1983
纳立只做原装正品13590203865
询价
ON
19+
TO-204
30000
原装正品,价格优
询价
ON
2019
TO-204
55000
只做原装正品现货
询价
ON Semiconductor
2022+
14
全新原装 货期两周
询价
更多2N5686G供应商 更新时间2024-4-30 15:14:00