2N5884G

Complementary Silicon High?뭁ower Transistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

2N5884G

Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-204 Tray;

2N5884G

Package：TO-204AA，TO-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 25A TO204

2N5884

ComplementarySiliconHigh?뭁owerTransistors

Complementarysiliconhigh−powertransistorsaredesignedforgeneral−purposepoweramplifierandswitchingapplications. Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0Vdc,(max)atIC=15Adc •LowLeakageCurrent ICEX=1.0mAdc(max)atRatedVoltage •Excell

2N5884

COMPLEMENTARYSILICONHIGH-POWERTRANSISTORS

General-PurposePowerAmplifierandSwitchingApplications Features •LowCollector−EmitterSaturationVoltage− VCE(sat)=1.0V(Max)@IC=15A •ExcellentDCCurrentGain− hFE=20~100@IC=10A

2N5884

COMPLEMENTARYSILICONHIGHPOWERTRANSISTORS

DESCRIPTION The2N5884and2N5886arecomplementarysiliconpowertransistorinJedecTO-3metalcaseintededforuseinpowerlinearamplifiersandswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES ■HIGHCURRENTCAPABILITY APPLICATION