COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (M

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ONSEMI

安森美半导体

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044

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BOCA

博卡

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

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CENTRAL

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER

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CENTRAL

POWER TRANSISTORS(10A,80W)

. . . designed for general–purpose amplifier and low–speed switching applications. FEATURES: • Collector–Emitter Sustaining Voltage - VCEO(sus) = 60 V (Min) – 2N6040, 2N6043 = 80 V (Min) – 2N6041, 2N6044 = 100 V (Min) – 2N6042, 2N6045 • Collecto

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MOSPEC

统懋

Transistor General Purpose

Description: A Silicon epitaxial PNP Darlington transistor in a TO-220 type Case designed for general-purpose amplifier and Low speed switching circuits. Features: • High DC Current Gain • Collector-Emitter Sustaining Voltage VCEO(SUS)=100V Min. • Monolithic Construction With Built-in Base-

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MULTICOMP

易络盟

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type 2N6044 APPLICATIONS • Designed for general purpose amplifier and l

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ISC

无锡固电

POWER DERATING

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

文件：241.09 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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CENTRAL

2N6041 - 单晶体管 双极, PNP, -80 V, 75 W, 8 A, 20000 hFE

The 2N6041 is a silicon PNP Darlington Transistor designed for general purpose amplifier and low-speed switching applications. ·High DC current gain\n·100V Minimum collector - emitter sustaining voltage VcE0(sus)\n·Monolithic construction with built-in base-emitter shunt resistors\n·-65 to 150°C Operating junction temperature range;

Multicomp

易络盟