COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

文件：186.39 Kbytes 页数：4 Pages

boca

博卡

POWER TRANSISTORS(15A,160W)

General-Purpose Power Amplifier and Switching Applications FEATURES: * Low Collector-Emitter Saturation Voltage - VCE(SAT) = 1.0V(Max.) @ IC = 7.0A * Execllent DC Current Gain - hFE = 10 ~ 100 @ IC = 6.0 A

文件：180.43 Kbytes 页数：4 Pages

MOSPEC

统懋

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • Low collector saturation voltage • Complement to type 2N5881 2N5882 APPLICATIONS • For general-purpose power amplifier and switching applications

文件：131.37 Kbytes 页数：3 Pages

ISC

无锡固电

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS ... designed for general-purpose power amplifier and switching applications. ● Collector-Emitter Sustaining Voltage - VCEO(sus) = 60 Vdc(Min) - 2N5879, 2N5881 = 60 Vdc(Min) - 2N5880, 2N5882 ● DC Current Gain - hFE = 20

文件：171.42 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

文件：114.83 Kbytes 页数：3 Pages

SAVANTIC

160W PNP Complementary BJT Transistor

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.

Digitron

Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Central

Trans GP BJT PNP 80V 15A 3-Pin(2+Tab) TO-3

NJS

包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PNP POWER TRANSISTOR SILICON AMP

Microchip

微芯科技