Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

文件：94.94 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-204 Tray

NJS

Package：TO-204AA，TO-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 25A TO204

ONSEMI

安森美半导体

Complementary Silicon High?뭁ower Transistors

Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc • Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage • Excell

文件：94.94 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Power Transistors

Power Transistors

文件：347.98 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

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COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

DESCRIPTION The 2N5884 and 2N5886 are complementary silicon power transistor in Jedec TO-3 metal case inteded for use in power linear amplifiers and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ HIGH CURRENT CAPABILITY APPLICATION

文件：68.98 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体