2N5401RLRM

AmplifierTransistors

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401RLRM

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401RLRMG

AmplifierTransistorsPNPSilicon

AmplifierTransistors PNPSilicon Features •Pb−FreePackagesareAvailable*

2N5401S

EPITAXIALPLANARPNPTRANSISTOR

2N5401S

EPITAXIALPLANARPNPTRANSISTOR(GENERALPURPOSE,HIGHVOLTAGE)

GENERALPURPOSEAPPLICATION. HIGHVOLTAGEAPPLICATION. FEATURES •HighCollectorBreakdwonVoltage:VCBO=-160V,VCEO=-150V •LowLeakageCurrent.:ICBO=-50nA(Max.)@VCB=-120V •LowSaturationVoltage:VCE(sat)=-0.5V(Max.)@IC=-50mA,IB=-5mA •LowNoise:NF=8dB(Max.)

2N5401S

PNPSwitchingTransistor

Features -EpoxymeetsUL-94V-0flammabilityrating. -MoisturesensitivityLevel1.

2N5401S

HighVoltageTransistor

FEATURE ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

2N5401SQ

PNPTransistor

2N5401TA

PNPEpitaxialSiliconTransistor

AmplifierTransistor •Collector-EmitterVoltage:VCEO=150V •CollectorDissipation:PC(max)=625mW •Suffix“-C”meansConterCollector(1.Emitter2.Collector3.Base)

2N5401-TA

TO-92Plastic-EncapsulateTransistors

Features SwitchingandAmplificationinHighVoltage ApplicationssuchasTelephony LowCurrent HighVoltage