| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：13N60M2；Package：TO-220；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.27392 Mbytes 页数：18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
丝印：13N60M2；Package：IPAK；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.27392 Mbytes 页数：18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
丝印：13N60M2；Package：TO-247；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.27392 Mbytes 页数：18 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien 文件：1.10829 Mbytes 页数：23 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien 文件：1.10829 Mbytes 页数：23 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
Low gate input resistance Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.13696 Mbytes 页数：14 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS |
详细参数
- 型号：
13N60M2
- 制造商：
STMicroelectronics
- 功能描述：
POWER MOSFET - Rail/Tube
- 功能描述：
MOSFET N-CH 600V 11A IPAK
- 功能描述：
N-channel 600V,0.35Ohm,11A Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
22+ |
TO-251-3 |
6006 |
原装正品现货 可开增值税发票 |
询价 | ||
STMICRO |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
STM |
25+ |
TO-251 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
ST |
24+ |
原厂正品 |
9240 |
原装现货 假一赔百 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST |
23+ |
TO251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法 |
23+ |
TO251 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
ST/意法半导体 |
24+ |
TO-251-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 |
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