N-channel 650 V, 0.37 Ohm typ., 10 A MDmesh M2 Power MOSFET in IPAK package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (Coss) profile• 100% avalanche tested\n• Zener-protected;

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丝印：13N65M2；Package：IPAK；N-channel 650 V, 0.37 ??typ.,10 A MDmesh??M2 Power MOSFETs in TO-220 and IPAK packages

文件：551.01 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

100 avalanche tested

文件：556.22 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：570.96 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Zener-protected

文件：570.96 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体