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型号	下载订购	功能描述	制造商上传企业	LOGO
STW13N60M2	文件：1.27392 Mbytes Page：18 Pages	丝印：13N60M2；Package：TO-247；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.27392 Mbytes 页数：18 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STW13N60M2	文件：300 bytes Page：1 Pages	N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-247 package These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefor • Extremely low gate charge\n• Lower RDS(on)x area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;	ST 意法半导体	ST
STB13N60M2	文件：1.10829 Mbytes Page：23 Pages	Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien 文件：1.10829 Mbytes 页数：23 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STD13N60M2	文件：1.10829 Mbytes Page：23 Pages	Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficien 文件：1.10829 Mbytes 页数：23 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STF13N60M2	文件：1.13696 Mbytes Page：14 Pages	Low gate input resistance Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.13696 Mbytes 页数：14 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

技术参数

Package：
TO-247
Grade：
Industrial
VDSS(V)：
600
RDS(on)_max(@ VGS=10V)(Ω)：
0.38
Drain Current (Dc)_max(A)：
11
PTOT_max(W)：
110
Qg_typ(nC)：
17

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市华高宇电子有限公司	STW13N60M2	STM	18+		2760	TO-247-3	询价
深圳和润天下电子科技有限公司	STW13N60M2	ST/意法半导体	22+	TO-247-3	6005	原装正品现货可开增值税发票	询价
易创佳业科技（深圳）有限公司	STW13N60M2	STM	23+	TO-247-3	2490	原装现货支持送检	询价
深圳市高捷芯城科技有限公司	STW13N60M2	ST(意法半导体)	24+	TO-247	7814	支持大陆交货,美金交易。原装现货库存。	询价
深圳市科恒伟业电子有限公司	STW13N60M2	ST	2430+	TO247	8540	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市达恩科技有限公司	STW13N60M2	STMicroelectronics	24+	NA	3000	进口原装正品优势供应	询价
深圳市百诺芯科技有限公司	STW13N60M2	ST/意法	23+	NA	12730	原装正品代理渠道价格优势	询价
艾睿（深圳）半导体有限公司	STW13N60M2	ST(意法半导体)	2447	TO-247	105000	30个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	STW13N60M2	STM	25+	TO-247	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市正纳电子有限公司	STW13N60M2	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价

更多STW13N60M2供应商更新时间2025-10-8 9:04:00

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