首页 >STW13N60M2>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
STW13N60M2 | Marking：13N60M2；Package：TO-247；N-channel 600 V, 0.35 廓 typ., 11 A MDmesh II Plus??low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | |
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Extremelylowgatecharge Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedverticalstructure,thesedevicesexhibitlowon-resistanceandoptimizedswitchingcharacteristics,renderingthemsuitableforthemostdemandinghighefficien | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Extremelylowgatecharge | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-channel600V,0.35typ.,11AMDmeshTMM2PowerMOSFETinaTO-220FPultranarrowleadspackage Features Extremelylowgatecharge LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThisdeviceisanN-channelPowerMOSFET developedusingMDmesh™M2technology. Thankstoitsstriplayoutandanimproved | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
Lowgateinputresistance Description ThisdeviceisanN-channelPowerMOSFETdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.Itis | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channel600V,0.35廓typ.,11AMDmeshIIPlus??lowQgPowerMOSFETsinTO-220,IPAKandTO-247packages Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
18+ |
2760 |
TO-247-3 |
询价 | |||
ST/意法半导体 |
22+ |
TO-247-3 |
6005 |
原装正品现货 可开增值税发票 |
询价 | ||
STM |
23+ |
TO-247-3 |
2490 |
原装现货支持送检 |
询价 | ||
ST(意法半导体) |
24+ |
TO-247 |
7814 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ST |
2430+ |
TO247 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
ST/意法 |
24+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
ST(意法半导体) |
2447 |
TO-247 |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
STM |
1809+ |
TO-247 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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