isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 620 V, 2.2 廓 , 2.7 A SuperMESH3??Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK

文件：567.11 Kbytes 页数：19 Pages

STMICROELECTRONICS

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N-channel 620 V, 2.2 OHM , 2.7 A SuperMESH3 Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK

文件：554.39 Kbytes 页数：20 Pages

STMICROELECTRONICS

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N-Channel 650V (D-S) Power MOSFET

文件：977.21 Kbytes 页数：9 Pages

VBSEMI

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N沟道620 V、2.2 Ohm典型值、2.7 A SuperMESH3(TM) 功率MOSFET，IPAK封装

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable f • 100% avalanche tested \n• Extremely high dv/dt capability \n• Very low intrinsic capacitance \n• Improved diode reverse recovery characteristics \n• Zener-protected;

ST

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