isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET

Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Ver

文件：344.84 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 30 V, 0.0072 廓, 48 A DPAK, IPAK, TO-220 STripFET??V Power MOSFET

文件：391.92 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：861.45 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

N-channel 30 V, 0.0076 Ohm typ., 48 A STripFET H5 Power MOSFET in an IPAK package

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. Low on-resistance R\nDS(on)\nHigh avalanche ruggedness\nLow gate drive power loss;

ST

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：861.44 Kbytes 页数：8 Pages

VBSEMI

微碧半导体