isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.38 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.0681 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、1.3 Ohm典型值、3.5 A MDmesh M2功率MOSFET，IPAK封装

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：1.0681 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：298.99 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：743.95 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体