isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V APPLICATIONS ·High current,high speed switching ·Switch mode power supplies ·DC-AC converters for welding,UPS and Motor drive

文件：324.15 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：W10NK80Z；Package：TO-247；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：W10NK80Z；Package：TO-247；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件：452.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道800 V、0.78 Ohm、9 A有齐纳管保护的SuperMESH(TM) 功率MOSFET，TO-247封装

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high • Extremely high dv/dt capability \n• 100% avalanche tested \n• Gate charge minimized \n• Very low intrinsic capacitances \n• Very good manufacturing repeability;

ST

意法半导体